MOSFETs vs. BJTs
3. Comparing the Paralleling Potential
When it comes to paralleling transistors, both MOSFETs and BJTs can be used, but they have different characteristics that make them more or less suitable for certain applications. MOSFETs, in general, tend to be a bit easier to parallel than BJTs, primarily due to their positive temperature coefficient. This means that as a MOSFET heats up, its resistance increases slightly, which helps to self-regulate the current sharing. If one MOSFET starts to draw too much current and heats up, its increased resistance will cause it to draw less current, naturally balancing the load.
BJTs, on the other hand, have a negative temperature coefficient, meaning that as they heat up, their resistance decreases. This can lead to thermal runaway, where a BJT that starts to draw more current will heat up, further decreasing its resistance, causing it to draw even more current, potentially leading to damage. This is why ballast resistors are particularly important when paralleling BJTs.
However, BJTs can offer some advantages in terms of cost and availability, and with proper design considerations (like those ballast resistors), they can be effectively used in parallel configurations. It often comes down to a trade-off between ease of use, cost, and performance requirements.
Another thing to consider is the switching speed. MOSFETs generally have faster switching speeds than BJTs, which can be important in high-frequency applications. If you're switching the transistors on and off rapidly, MOSFETs might be the better choice. Ultimately, the best transistor type for your parallel application will depend on the specific requirements of your circuit.